The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[18a-G204-1~8] 13.8 Optical properties and light-emitting devices

Sun. Mar 18, 2018 9:30 AM - 11:30 AM G204 (63-204)

Kenji Shinozaki(AIST)

9:30 AM - 9:45 AM

[18a-G204-1] Theoretical analysis of the effects of amorphous structures by oxidation of 4H-SiC on the surface single-photon sources

Yoritaka Furukawa1, Yasuto Hijikata2, Takeshi Ohshima3, Yu-ichiro Matsushita1 (1.The Univ. of Tokyo, 2.Saitama Univ., 3.QST)

Keywords:single-photon source, SiC

Single-photon sources on the surface of SiC, whose defect types are still unknown, are characterized by their wide variation of their luminescnece peaks. By performing first-principles calculations, we found that the positions of the defect levels are dependent not only on the defect types, but also on the surface structures, which are amorphousized in the presence of oxygen atoms.