The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[18a-G204-1~8] 13.8 Optical properties and light-emitting devices

Sun. Mar 18, 2018 9:30 AM - 11:30 AM G204 (63-204)

Kenji Shinozaki(AIST)

11:00 AM - 11:15 AM

[18a-G204-7] Photoluminescence of ZnO:Eu films: Comparison between Si and SiO2 substrates

Housei Akazawa1, Hiroyuki Shinojima2 (1.NTT DIC, 2.Kurume NCT)

Keywords:ZnO:Eu, photoluminescence, energy transfer

Photoluminescence of Eu3+ ions domped in ZnO crystal is affected by occupation sites of Eu3+, energy transfer from ZnO to Eu3+, and competition with defect emission. We report luminescent properties of ZnO:Eu films on SiO2 substrate and elucidate energy dissipation processes in comparison with that when Si substrate is used.