[18a-P4-1~10] 9.3 Nanoelectronics

[18a-P4-4] Analysis of stability regions of single-common-gate double-dot single-electron devices with asymmetric gate capacitances

〇Yusuke Watanabe¹, Shigeru Imai¹ (1.Ritsumeikan Univ.)

Keywords:single electron device