9:30 AM - 11:30 AM
[18a-P4-8] Hemispheric Electroless Au Plated Nanogap over Pt Initial Electrodes
Keywords:Electroless gold plating, Pt, Nanogap electrodes
Nanogap electrodes with 3 nm in gap separation are the platform of sub-10 mm scale devices. We have established the fabrication method of electroless Au plating (ELGP) over Au nanogap electrodes by combining with electron beam lithography [1,2]. The advantage of the ELGP process is a self-termination mechanism for controlling gap separation as 3 nm, a simultaneous mass-production at a yield of 90 %, and a robustness as the nanogap electrodes maintain their structure unchanged up to 170 ℃. By using Au based ELGP nanogap electrodes, we have demonstrated logic circuit operation on SETs based on an Au nanoparticle and the nanogap electrodes with three input gate electrodes [3]. To realize room temperature operation of SETs, it is required to reduce the linewidth of the electrodes at the nanogap from 40 nm to sub-10 nm to improve gate capacitances.
Here, we demonstrate fabrication processes of ELGP over Pt initial electrodes. Pt initial electrodes with the linewidth of 15 nm have been prepared by EBL (Fig. 1a). After ELGP process, hemispheric electroless Au plated nanogap (H-ELGP) with the top radius of a few nm is prepared, that enable us to control the gap separation as about 3 nm by self-termination mechanism (Fig. 1b). It is noted that the Au over Pt electrode has strong adhesion and durability compared with Au electrode. By using the H-ELGP nanogap electrodes, single molecular transistor operation has been demonstrated owing to the improvement of a gate capacitance.
Here, we demonstrate fabrication processes of ELGP over Pt initial electrodes. Pt initial electrodes with the linewidth of 15 nm have been prepared by EBL (Fig. 1a). After ELGP process, hemispheric electroless Au plated nanogap (H-ELGP) with the top radius of a few nm is prepared, that enable us to control the gap separation as about 3 nm by self-termination mechanism (Fig. 1b). It is noted that the Au over Pt electrode has strong adhesion and durability compared with Au electrode. By using the H-ELGP nanogap electrodes, single molecular transistor operation has been demonstrated owing to the improvement of a gate capacitance.