[18p-A202-1~15] Semiconductor Device Simulation: Applications and Future Perspectives

[18p-A202-5] Physical Aspects of Potential Fluctuations associated with Localized Disorder in Device Simulations under Nanostructures

〇Nobuyuki Sano¹ (1.Univ. Tsukuba)

Keywords:semiconductor device, nanoscale, localized disorder

Localized disorder such as impurity, defect, and/or interface roughness under nanoscale device structures becomes of crucial importance in understanding properly the device characteristics. In order to reflect such effects on potential fluctuations, it is essential to consider self-consistently the length-scales involved in both localized disorder and device simulation. In the present talk, we would like to discuss the physical aspects of the potential fluctuations under the framework of various device simulation schemes.