[18p-B201-1~14] 3.15 Silicon photonics

[18p-B201-1] [INVITED] Status and Prospect of Photonic Devices using III-V/Si Hybrid Integration Technologies

〇Nobuhiko Nishiyama^1,2, Tomohiro Amemiya^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech. Eng., 2.Tokyo Tech. IIR)

Keywords:Silicon Photonics, Heterogeneous Integration

Compound semiconductors in photonic integrated circuits have difficulties in terms of enlarging the scale. Replacing the platform with silicon while maintaining the optical gain medium by the compound semiconductor can solve this problem. In this presentation, I would like to discuss the future development through introducing the characteristics of the heterogeneous material bonding technology and the device characteristics using it, with particular application to photonic integrated circuits.