[18p-B201-1~14] 3.15 Silicon photonics

△ [18p-B201-2] Non-destructive confirmation method of bonding situation for III-V/Si hybrid partial direct bonding

〇Liu Bai¹, Takehiko Kikuchi^1,3, Junichi Suzuki¹, Kumi Nagasaka¹, Nobuhiko Nishiyama^1,2, Hideki Yagi³, Tomohiro Amemiya^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech., 2.FIRST, 3.SEI)

Keywords:III-V/Si hybrid, partial bonding, Non-destructive

Hybrid lasers that integrate III-V epitaxial using Si as a platform have attracted attention. When bonding dies with different sizes and types wafer, it is necessary to use partial direct bonding. In order to non-destructively confirm the bonding situation of this partial bonding method, particularly the thickness of the air gap, a method of estimating the thickness of the air layer and the epitaxial layer from the photoluminescence (PL) measurement data by using the propagation matrix method, and compared it with the result of cross section SEM observation.