[18p-B201-1~14] 3.15 シリコンフォトニクス

△ [18p-B201-3] High-speed direct modulation of 1.3 μm InAs quantum dot laser grown on on-axis (001) Si substrate

〇(P)Daisuke Inoue^1,2、Daehwan Jung²、Yating Wan²、Justin Norman²、Nobuhiko Nishiyama¹、Shigehisa Arai¹、Arthur C. Gossard²、John E. Bowers² (1.Institute of Innovative Research, Tokyo Tech.、2.Department of Electrical and Computer Engineering, UCSB)

キーワード：Quantum dot laser, direct growth on silicon, direct modulation

Quantum dot (QD) lasers have enormous potential for on-chip silicon light sources. Low threshold and reliable operation of InAs QD lasers monolithically grown on an on-axis (001) Si substrate have been demonstrated. Though direct modulation of QD laser on Si has been performed for bonded integration platform, there has been no report on direct-modulation properties of QD lasers epitaxially grown on Si. Here, we report the first demonstration of a direct-modulation of QD laser grown on Si. As a result, 12.5 Gbit/s direct modulation was successfully achieved.