[18p-B203-1~17] 3.13 Semiconductor optical devices

[18p-B203-16] Novel High-Performance Transistor Consists of Merely Solar Cell and High-Power LED

〇Kensho Okamoto¹ (1.Optoelectronic Device Labo.)

Keywords:solar cell, light-emitting diode, transistor

It is well known that classical silicon bipolar transistors, i.e. Si junction transistors, consist of Si layer structure of PNP or NPN. The author found in 2011 that an epoch-making amplifier device was easily produced merely by LED and Si photodiode couple, which were electrically connected in series and placed facing each other. He named the novel transistor “distar”. The distar operated in the same way as conventional bipolar transistor. The distar behaved like a switching transistor thyristor when the distance between LED and Si photodiode became nearer within a certain value. The author named the thyristor-mode distar as diristar. Distar and diristar with high output power can be easily produced by replacing Si photodiode with Si solar cell which has much broader light-receiving area and allowable current. Thus, the discovery of new device “distar” and “diristar” will pave a new way to semiconductor electronics, although they are not yet known in the field of semiconductor engineering. The strongest merit of the distar and diristar is easiness of production of higher output device. This paper introduces the manufacturing process and the characteristics of high-output distar and diristar.