2018年第65回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

11 超伝導 » 11.2 薄膜,厚膜,テープ作製プロセスおよび結晶成長

[18p-B403-1~19] 11.2 薄膜,厚膜,テープ作製プロセスおよび結晶成長

2018年3月18日(日) 13:15 〜 18:30 B403 (53-403)

尾崎 壽紀(関西学院大)、寺西 亮(九大)、一野 祐亮(名大)

16:00 〜 16:15

[18p-B403-11] Development of Zr-doped CeO2 single buffer layers for YBCO coated conductor applications

Li Lei1,2、Limin Li1、Shasha Wang1、Gaoyang Zhao1、Jiqiang Jia1、Yoshifumi Oshima2、Lihua Jin3、Chengshan Li3、Pingxiang Zhang3 (1.Xian University of Technology、2.Japan Advanced Institute of Science and Technology、3.Northwest Institute for Nonferrous Metal Research)

キーワード:YBCO coated conductor

Since YBa2Cu3O7-δ (YBCO) coated conductors (CCs) have better current carrying performance under magnetic field, it is considered as the unique candidate for heavy current and strong magnetic applications at liquid nitrogen temperature. However, the architecture of YBCO CCs developed in recent years is quite complicated, which leads to the difficulty of manufacturing technology and high costs. In this work, a novel zirconium doped ceria (CZO) single buffer layer architecture grown on RABiTS-NiW tapes will be developed to fabricate YBCO CCs. XRD results show that the as-prepared CZO buffer layers have excellent (001)-preferred orientation as well as sharp in-plane and out-of-plane texture. According to XPS depth profile analysis, the width of element diffusion region between CZO film and NiW tape is only around 35 nm, indicating that the as-prepared buffer layer has an ability to prevent the element diffusion effectively. To verify the feasibility for developing novel CCs with simplified architecture, we attempt to fabricate epitaxial YBCO/CZO bilayer films on (001)-oriented yttria stabilized zirconia (YSZ) single crystal substrates via all chemical solution deposition processes. Cross-sectional (S)TEM results show that high dense stacking faults appear in YBCO matrix, which serve as effective pinning centers to enhance the flux-pinning performance of YBCO film. The maximum pinning force of the YBCO film grown on CZO buffered YSZ substrate is up to 17.67 GN/m3 @ 65 K. It is believed that CZO single buffer layer architecture can be considered as a potential candidate to develop high performance CCs.