14:30 〜 14:45
▲ [18p-C102-4] Neutral Oxygen Beam Surface Treatment Enabled Resistive Switching Characteristics in ZnO-based Conducting Bridge Random Access Memory
キーワード：resistive memory, conducting bridge memory, switching devices
The conventional flash (non-volatile) and dynamic random access (volatile) technologies have been widely used for secondary and system memories, respectively; however, these technologies have met their scalability limit. Conducting bridge random access memory (CBRAM) as an emerging memory technology may overcome the scaling issue; moreover, it has potential as a universal memory for both secondary and system data storage application. The CBRAM mechanism relies upon the voltage induces ionic drift; results in the formation and rupture of metallic bridge accumulation that behaves as an electrical switch. However, such ionic drift is often difficult to control and leads to a deterioration switching performance and even a disability to show switching behavior. In this work, we developed a simple method by utilizing neutral beam oxidation (NBO) surface treatment to induce switching behavior in ZnO-based CBRAM devices. ZnO material is often overlooked as a candidate for a reliable storage layer due to its n-type nature. The high concentration of donor defects contributes to the occurrence of high leakage current in switching devices. Consequently, the effective thickness of ZnO switching layer is usually very thick (55 nm and above) to compensate sufficient resistance. The effective thickness of the ZnO switching layer need to be reduced in order to compete with another oxide system.