[18p-C102-1~16] 6.3 Oxide electronics

△ [18p-C102-9] Non-Destructive Operando Observations of Chemical States in ReRAM by Laser-excited Photoemission Electron Microscopy

〇(M2)Junpei Kawakita^1,2, Hisashi Shima^2,3, Yasuhisa Naito^2,3, Hiro Akinaga^2,3, Toshiyuki Taniuchi^1,2, Shik Shin^1,2 (1.ISSP, Univ. of Tokyo, 2.OIL AIST-UTokyo OPERANDO-OIL, 3.NeRI-AIST)

Keywords:ReRAM, PEEM, operando measurement

We have demonstrated the nondestructive operando measurement of resistive random access memory (ReRAM) using laser-excited photoemission electron microscopy. We successfully observed the dynamic process of resistance switching and the clear difference between HRS and LRS beneath 10 nm thick top electrode in-situ without any destructive processing. This new technique will accelerate research and development for various types of electronic devices.