[18p-C204-1~9] Synthesis and plasma processing for 2D sheet materials -from ultra-thin films to atomically thin layered materials-

[18p-C204-6] Homoepitaxial growth for exploring luminous properties of hexagonal boron nitride

〇Kenji Watanabe¹, Takashi Taniguchi¹ (1.NIMS)

Keywords:hexagonal boron nitride, homoepitaxial growth, Two dimensional materials

The crystal structure of h-BN is similar to that of graphite. This insulating layer material is suitable for the supporting layers of insulation for graphene. It also shows intense DUV luminescence, for which the mechanism is still controversial. In my talk, we report the approach for elucidating the luminous properties through homoepitaxial growth technique.