The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

Sun. Mar 18, 2018 1:45 PM - 7:00 PM C302 (52-302)

Naoteru Shigekawa(Osaka City Univ.), Taketomo Sato(Hokkaido Univ.)

6:00 PM - 6:15 PM

[18p-C302-16] Switching Characteristics of β-Ga2O3 Schottky Barrier Diodes

〇Jun Arima1, Jun Hirabayashi1, Minoru Fujita1, Daisuke Inokuchi1, Kohei Sasaki2,3, Akito Kuramata2,3, Yoshiaki Fukumitsu1 (1.TDK Corp, 2.Novel Crystal Tech, 3.Tamura Corp)

Keywords:semiconductor