[18p-D101-1~17] 16.3 Bulk, thin-film and other silicon-based solar cells

[18p-D101-7] Temperature Dependence Measurements of Interdigitated Back Contact, Passivated Emitter and Rear Cell, and Silicon Heterojunction Photovoltaic Modules

〇Shigeomi Hara¹, Jaffar Abdu¹, Sungwoo Choi², Yasuo Chiba², Atsushi Masuda², Makoto Kasu^1,2 (1.Saga Univ., 2.AIST)

Keywords:photovoltaic, temperature characteristics, high efficiency

Evaluating the temperature dependence of photovoltaic (PV) modules is essential to understand their outdoor performance and to accurately estimate the energy yield in mega-watt solar power plant and rooftop systems . The high-temperature performance of the recently developed high-efficient crystalline Si PV modules, such as the passivated emitter with rear cell (PERC), interdigitated back contact (IBC), and Si heterojunction (SHJ) PV module, is yet to be reported. Therefore, the temperature dependence of various types of PV modules, such as the mono-Si, IBC, PERC, SHJ, and multi-Si modules are investigated in this study.