[18p-D102-1~23] 12.4 Organic light-emitting devices and organic transistors

△ [18p-D102-7] Solution-Based Formation of Organic Semiconductor Layers on Ultrahydrophobic Polymer Dielectric Layers and the Transistor Characteristics

〇(M2)Gyo Kitahara^1,2, Jun'ya Tsutsumi², Shunto Arai¹, Tatsuo Hasegawa^1,2 (1.Tokyo Univ., 2.AIST-FLEC)

Keywords:printed electrodes, polymer semiconductor, hydrophobic polymer dielectric

For fabrication of organic thin-film transistors (OTFTs) by solution process, stable operation is indispensable, for example, by means of hydrophobic dielectric. In our research, we constructed bottom-contact OTFTs composed of ultra-hydrophobic polymer dielectric by solution process, with printed electrodes by SuPR-NaP technique, and with printed organic semiconductor by push-coating. Ultra-hydrophobic polymer dielectric enabled negligible hysteresis compared to silica dielectric, and we will report the result.