The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-E201-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 18, 2018 1:45 PM - 5:15 PM E201 (57-201)

Norifumi Fujimura(Osaka Pref. Univ.), Hisao Makino(Kochi Univ. of Tech.)

4:15 PM - 4:30 PM

[18p-E201-10] Effects of V and N co-doped ZnO buffer layer on growth of ZnO thin film on c-face sapphire

Kohtaroh Ohno1, Tomohiro Kanematsu2, Tomoyuki Kawashima2, Katsuyoshi Washio2 (1.Tohoku Univ., 2.Grad. Sch. Eng. Tohoku Univ.)

Keywords:ZnO, crystal growth, buffer layer