The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-E201-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 18, 2018 1:45 PM - 5:15 PM E201 (57-201)

Norifumi Fujimura(Osaka Pref. Univ.), Hisao Makino(Kochi Univ. of Tech.)

2:00 PM - 2:15 PM

[18p-E201-2] Epitaxial growth and electrical properties of NiO thin films using by mist CVD method

Takumi Ikenoue1, Masao Miyake1, Tetsuji Hirato1 (1.Kyoto Univ.)

Keywords:mist CVD, NiO, Electrical properties