The 65h JSAP Spring Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E202-1~22] 15.4 III-V-group nitride crystals

Sun. Mar 18, 2018 1:15 PM - 7:30 PM E202 (57-202)

Tsutomu Araki(Ritsumeikan Univ.), Ryuji Katayama(Osaka Univ.), Hajime Fujikura(SCIOCS)

6:00 PM - 6:15 PM

[18p-E202-17] Characteristics of Mg-doped GaN films prepared by pulsed sputtering

〇Taiga Fudetani1, Kohei Ueno1, Atsushi Kobayashi1, Hiroshi Fujioka1,2 (1.IIS, UTokyo, 2.JST-ACCEL)

Keywords:sputtering, GaN