Effect of the oxygen concentration on electrical properties of GaN crystals grown the Na-flux method.

Kiyoto Endo; Takumi Yamada; Ryusei Kuramoto; Masatoshi Hayashi; Hitoshi Kubo; Mihoko Maruyama; Kosuke Murakami; Masayuki Imanishi; Mamoru Imade; Masashi Yoshimura; Yusuke Mori

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E202-1~22] 15.4 III-V-group nitride crystals

Sun. Mar 18, 2018 1:15 PM - 7:30 PM E202 (57-202)

Tsutomu Araki(Ritsumeikan Univ.), Ryuji Katayama(Osaka Univ.), Hajime Fujikura(SCIOCS)

1:45 PM - 2:00 PM

△ [18p-E202-2] Effect of the oxygen concentration on electrical properties of GaN crystals grown the Na-flux method.

〇(B)Kiyoto Endo¹, Takumi Yamada¹, Ryusei Kuramoto¹, Masatoshi Hayashi¹, Hitoshi Kubo¹, Mihoko Maruyama¹, Kosuke Murakami¹, Masayuki Imanishi¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

Keywords:GaN, Na-flux method

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