[18p-E202-1~22] 15.4 III-V-group nitride crystals

[18p-E202-22] Growth of GaN on (0001) Sapphire Substrates Using h-BN Buffer Layer by MBE

〇Yasuyuki Kobayashi¹, Keiichi Nakata¹, Hideki Nakazawa¹, Hiroshi Okamoto¹, Masanobu Hiroki², Kazuhide Kumakura² (1.Hirosaki Univ., 2.NTT BRL)

Keywords:boron nitride, molecular beam epitaxy

We grew GaN thin films on (0001) sapphire substrates using h-BN buffer layer. Intensity of (0002) GaN in X-ray diffraction decreses as the thickness of h-BN buffer layer increases.