The 65h JSAP Spring Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E202-1~22] 15.4 III-V-group nitride crystals

Sun. Mar 18, 2018 1:15 PM - 7:30 PM E202 (57-202)

Tsutomu Araki(Ritsumeikan Univ.), Ryuji Katayama(Osaka Univ.), Hajime Fujikura(SCIOCS)

2:30 PM - 2:45 PM

△ [18p-E202-5] Leakage current analysis for dislocations in the modified Na-flux GaN single crystal

〇Takeaki Hamachi1, Shotaro Takeuchi1, Tetsuya Tohei1, Masayuki Imanishi2, Mamoru Imade2, Yusuke Mori2, Akira Sakai1 (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch.of Eng., Osaka Univ.)

Keywords:Na flux GaN, Dislocation, Conductive atomic force microscopy