[18p-F206-1~15] 6.2 Carbon-based thin films

△ [18p-F206-7] Vertical 2DHG Diamond MOSFET with improvement the structure for high breakdown voltage and miniaturization

〇(B)Masayuki Iwataki¹, Nobutaka Oi¹, Tsubasa Muta¹, Kiyotaka Horikawa¹, Syotaro Amano¹, Masakuni Hideko¹, Taisuke Kageura¹, Masafumi Inaba², Atsushi Hiraiwa¹, Hiroshi Kawarada^1,3 (1.Waseda Univ., 2.Nagoya Univ., 3.Waseda Zaiken.)

Keywords:Diamond, Vertical type device, MOSFET

We develop the Vertical 2DHG Diamond MOSFET which has trench with width 2~4 um, depth 4um. This device This device succeeded in obtaining high current density by miniaturization. And, we formed nitrogen doped layer to suppress the leakage current in the vertical direction, and obtained a high current on/off ratio. We formed nitrogen doped layer that has a structure alleviating electric field concentration by changing the concentration of the doped nitrogen. By alleviating concentration of electric field, the performance of dielectric breakdown voltage is expected to improve. From these reasons, we are planning to report the device that realize high current density and high breakdown voltage.