[18p-F310-1~7] 13.9 Compound solar cells

[18p-F310-4] Electronic structure at the interface between CdS and Cu₂Zn(SnGe)Se₄

〇Takehiko Nagai¹, Suehiro Kawamura², Sinichi Takaki², Kenta Kawasaki², Takuya Shimamura², Hitoshi Tampo¹, Shinho Kim¹, Hajime Shibata¹, Koji Matsubara¹, Shigeru Niki¹, Norio Terada² (1.AIST, 2.Kagoshima Univ.)

Keywords:Kesterite, Solar cells, Inversed photoemission spectroscopy

We will report that the intrinsic nature of germanium (Ge)-incorporated Cu₂ZnSnSe₄ (CZTSe) with the Ge/(Ge+Sn) ratios of 0.2 {Cu₂Zn(Sn_0.8Ge_0.2)Se₄} (CZTGSe) surface, and the electronic structure at the interface between cadmium sulphide (CdS) buffer and CZTGSe absorber layer for solar cells by using the X-ray photoemission spectroscopy (XPS), ultra-violet photoemission spectroscopy (UPS), and inversed photoemission spectroscopy (IPES) in each step of CdS deposition, since these electronic structure relate with the solar cell performances.