The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[18p-G204-1~16] 13.8 Optical properties and light-emitting devices

Sun. Mar 18, 2018 1:15 PM - 5:30 PM G204 (63-204)

Jumpei Ueda(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

2:00 PM - 2:15 PM

[18p-G204-4] Investigation of carrier trapping for Ca2SnO4:Ln(Ln=Eu3+, Tb3+) persistent phosphor by vacuum referred binding energy diagram

Takayuki Tokunaga1, Ueda Jumpei1, Tanabe Setsuhisa1 (1.Kyoto Univ.)

Keywords:rare earth, persistent phosphor

It was indicated that vacuum referred binding energy(VRBE) diagram is effective for investigating the carrier trap in lanthanide(Ln) ion doped persistent phosphor. It was reported that Ca2SnO4 :Ln showed various color persistent luminescence. Authors concluded that the persistent luminescence is caused by energy transfer from host material. And carrier trapping by Ln ion is not studied. In this talk, Ln ion carrier trapping for Ca2SnO4 is investigated by VRBE diagram.