The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[18p-G204-1~16] 13.8 Optical properties and light-emitting devices

Sun. Mar 18, 2018 1:15 PM - 5:30 PM G204 (63-204)

Jumpei Ueda(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

2:15 PM - 2:30 PM

[18p-G204-5] Quenching Processes by Thermal Ionization and Thermally Activated Crossover for 5d-4f Transition in Pr3+-doped Garnet Phosphors

Jumpei Ueda1, Setsuhisa Tanabe1, Andries Meijerink2, Pieter Dorenbos3, Adrie Bos3 (1.Kyoto Univ., 2.Utrecht Univ., 3.TU Delft)

Keywords:phosphor, thermal quenching

We investigated thermally activated ionization and thermally activated crossover as the two possibilities of quenching of 5d luminescence in Pr3+-doped Y3Al5−xGaxO12. Varying the Ga content x gives the control over the relative energy level location of the 5d and 4f2:3PJ states of Pr3+ and the host conduction band (CB). Based on spectroscopic results, we demonstrated that the thermal quenching of Pr3+:5d1-4f luminescence in Y3Al5−xGaxO12 with x = 0, 1, 2 is a thermally activated crossover while for x = 3, 4, 5 it results from the thermal ionization.