The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[18p-G204-1~16] 13.8 Optical properties and light-emitting devices

Sun. Mar 18, 2018 1:15 PM - 5:30 PM G204 (63-204)

Jumpei Ueda(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

3:00 PM - 3:15 PM

[18p-G204-8] Structure and luminescent properties of K+ doped Zn2SiO4:Mn-SiO2 composite

Tomoko Akai1, Masaru Yamashita1 (1.AIST)

Keywords:afterglow luminescence, Zn2SiO4:Mn, SiO2

We have investigated structure and luminescent properties of K doped Zn2SiO4:Mn-SiO2 composites. Emission at 530nm was drastically increased with K doping. In addition, afterglow luminescence was observed in K doped composites. From SEM(secondary electron and reflected electron) images, it is speculated that Zn2SiO4:Mn phase as large as a few tenth of nm are formed in K doped coposites.