[18p-G205-1~18] 12.1 Fabrications and Structure Controls

△ [18p-G205-3] Pentacene-based Pseudo-CMOS with N-doped LaB₆ Interfacial Layer

〇(D)Yasutaka Maeda¹, Mizuha Hiroki¹, Yuki Komatsu¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:pentacene, nitrogen-doped LaB6, interfacial layer

A nitrogen-doped LaB₆ interfacial layer (N-doped LaB₆ IL) for pentacene thin film and pentacene-based OFET had been investigated and reported. In this paper, we investigated pentacene-based Pseudo-CMOS with N-doped LaB₆ IL. Inverter characteristic was obtained by control of threshold voltage by introducing N-doped LaB₆ IL.