[18p-P12-1~4] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18p-P12-2] Persistent Homology Analysis of Amorphous SiO₂ Thin Film

〇Chong Zheng¹, Takuya Terada¹, Motohiro Tomita^1,2, Takanobu Watanabe¹, Akira Koyama¹ (1.Waseda Univ., 2.JSPS Research Fellow)

Keywords:Amorphous SiO2 Thin Film, Persistent Homology Group, Structure Analysis

This research investigates amorphous SiO2 thin film with persistent homology that captures geometric structures of amorphous model at [2]. As a topological method, persistent homology is used to find out the differences between the one-dimensional holes of amorphous at SiO2/Si interface and amorphous at other positions. According to the persistent diagram, there are more “small” holes in the amorphous near SiO2/Si interface than the amorphous at the top of the model, however, at the top of the model, more “large” holes exist. Furthermore, compared with silica crystal, the “large” hole in amorphous consists of 7 or 8 atoms instead of 6 atoms in silica crystal.