[18p-P14-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[18p-P14-1] Solution growth of 4inch diameter SiC single crystal using Si-Cr based solvent

〇Kazuhiko Kusunoki¹, Kazuaki Seki¹, Yutaka Kishida¹ (1.NSSMC)

Keywords:Solution growth, 4H-SiC

In order to put a solution-grown SiC single crystal to practical use, it is necessary to develop a crystal growth technology for obtaining further long and large diameter SiC ingot than the present status. In the present study, we attempted SiC solution growth of (1) a long ingot with 2 inch diameter and (b) a 4 inch diameter crystal using a large sized seed.