Excess carbon characterization near the 4H-SiC/SiO<sub>2</sub> interface by electron energy loss spectroscopy

Presentation information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 18, 2018 4:00 PM - 6:00 PM P14 (P)

4:00 PM - 6:00 PM

〇Yutaka Terao¹, Takayuki Hirose¹, Hideaki Teranishi¹, Hidenori Sato¹, Aki Takigawa¹ (1.Fuji Electric)

Keywords:SiC, MOS, EELS