[18p-P3-1~18] 9.4 Thermoelectric conversion

[18p-P3-16] KFM measurement of Si wire to evaluate Seebeck coefficient

〇Yuhei Suzuki^1,2, Akito Oka¹, Taketo Kawai¹, Takehiro Kumada³, Keisuke Shima³, Hirokazu Tatsuoka², Faiz Salleh⁴, Takanobu Watanabe³, Hiroya Ikeda^1,2 (1.RIE, Shizuoka Univ., 2.GSST, Shizuoka Univ., 3.Waseda Univ., 4.Univ. of Malaya)

Keywords:Seebeck coefficient, Kelvin-probe force microscopy, Si

Surface potential and temperature of a Si wire prepared in a Si-on-insulator layer (SOI) are simultaneously measured by Kelvin-probe force microscopy (KFM) in order to evaluate Seebeck coefficient.
The observed surface potential showed a high value at the interface between the buried oxide layer and SOI layer. The surface potentials of Si wire at the edge part and center part showed different values.
The influences of trapped charges existed in the buried oxide layer and the Si substrate are investigated with the consideration of a simulation of potential distribution.