[18p-P6-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

[18p-P6-16] Evaluation of lattice displacement of Zn-ion implanted GaN single crystal by Rutherford backscattering

〇Kyouhei Kubota¹, Nishimura Tomoaki¹, Kuriyama Kazuo¹, Nakamura Tohru¹ (1.Hosei Univ.)

Keywords:Zn-ion implanted, Rutherford backscattering, lattice displacement