The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[18p-P6-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 18, 2018 1:30 PM - 3:30 PM P6 (P)

1:30 PM - 3:30 PM

[18p-P6-9] Growth of CaSi2 Layer on Si(111) Substrate by MBE

〇Kenji Ito1, Tetsu Ohsuna1, Hideyuki Nakano1, Takashi Suemasu2 (1.TOYOTA CRDL, INC., 2.Univ. Tsukuba)

Keywords:calcium disilicide, silicene