[18p-P7-1~7] 13.3 Insulator technology

△ [18p-P7-1] Effect of Atomic Hydrogen Annealing on AlO_x/GeO_x/a-Ge Gate Stack

〇(B)Tomofumi Onuki¹, Akira Heya¹, Naoto Matsuo¹ (1.Univ. of Hyogo)

Keywords:semiconductor, Germanium, gate stack

In order to improve the electrical characteristics of the AlO_x/GeO_x/a-Ge gate stack structure fabricated on a quartz substrate by thermal treatment, the effect of Atomic Hydrogen Annealing (AHA) was investigated. The gate stack structure was exposed to atomic hydrogen generated by the catalytic cracking reaction. We measured the change of electrical properties by AHA treatment and studied the reaction with atomic hydrogen in the insulator films and at interfaces.
The reduction of leakage current by 1 order of magnitude and the improvement of hysteresis were confirmed by I-V and C-V measurements, respectively. It is considered that dangling bonds could be passivated by atomic hydrogen in the insulators and at interfaces.