[18p-P8-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-P8-5] Self-Formation of InAs Quantum Dots on SiO2/Semiconductor Substrates by Molecular Beam Deposition

〇Kouichi Yamaguchi¹, Praveen Wickramanayaka¹, Akinori Makaino¹, Katsuyoshi Sakamoto¹ (1.Univ. Electro-Comm.)

Keywords:quantum dot, InAs, SiO2