[18p-P8-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-P8-7] Non-alloy Ohmic contacts to n-GaAs for metasurface infrared photodetectors

〇Takaaki Mano¹, Hideki Miyazaki¹, Takeshi Kasaya¹, Takeshi Noda¹, Yoshiki Sakuma¹ (1.NIMS)

Keywords:GaAs, Ohmic contact, Metasurface

We are now investigating metasurface infrared photodetectors using GaAs/AlGaAs quantum wells. In this detectors, formation of non-alloy Ohmic contact to both top and bottom n-GaAs contact layers are essentially important. In this study, we show the formation of non-alloy Ohmic contact to bottom n-GaAs layer. By optimizing the Si-doping density and growth temperature, Ohmic contacts were realized to the bottom layer.