[19a-A404-1~9] 3.7 Laser processing

[19a-A404-3] Two growth mechanisms of SiO_x nanowires formed by continuous-wave laser vaporization of Si/Fe targets in high-pressure Ar gas

〇Takuya Kitamura¹, Toshihiko Kimura², Kazuya Hatano², Akira Koshio², Fumio Kokai² (1.Graduate School of Regional Innovation Studies, Mie Univ., 2.Graduate School of Engineering, Mie Univ.)

Keywords:silicon oxide, nanowire, laser vaporization

We have synthesized amorphous silicon oxide (SiO_x) nanowires (NWs) from Si and Si/SiO₂ targets by a continuous-wave (CW) laser vaporization method. Si acted as a catalyst. In this study, SiO_x NWs were formed by CW laser vaporization of Si/Fe mixed targets. We found that SiO_x NWs grew with both FeSi₂ and Si catalysts by changing the pressure of environmental Ar gas. We analyzed the products in details. We will compare two growth mechanisms of the NWs.