[19a-A404-1~9] 3.7 Laser processing

[19a-A404-4] Formation of silicon oxide nanotubes by laser vaporization of Si/Ge targets

〇Takatsugu Yoshida¹, Takashi Hiraiwa¹, Kazuya Hatano¹, Akira Koshio¹, Keita Kobayashi², Takao Sakata², Hidehiro Yasuda², Fumio Kokai¹ (1.Mie Univ., 2.Research Center for Ultra-High Voltage Electron Microscopy)

Keywords:silicon oxide, nanotube, laser vaporization

Silicon oxide nanotubes (SiO_x NTs) have been formed by several methods including a sol-gel method, chemical vapor deposition, and a method combining laser ablation and thermal evaporation in a high-temperature electric furnace. We found that SiO_x NTs were formed by continuous-wave laser evaporation of an Si/Ge target in high-pressure Ar gas. We discuss the formation mechanism of the NTs based on the characterization of the NTs and nanoparticles attaches with their tips, the relationship between the NT and tip particle diameters, and the influence of Ar gas pressure on the NT formation.