[19a-B201-1~8] 3.15 Silicon photonics

[19a-B201-4] Proposal of Ge/Si hybrid MOS optical modulators for mid-infrared photonics

〇(B)Yoshitaka Taguchi¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.Tokyo Univ.)

Keywords:Mid-infrared, Silicon photonics, Germanium

We propose a Ge/Si hybrid MOS optical modulator, where Ge thin layer is bonded to Si waveguide. A numerical analysis of modulation characteristics is also reported. The result of the analysis shows that thanks to a free carrier absorption of holes in Ge, this modulator can be downsized, smaller than Si optical modulator using phase change. It is promising that the modulator is available over a wide range of mid-infrared wavelength. These features indicate that the proposed modulator has attractive traits for mid-infrared photonics applications.