[19a-B201-1~8] 3.15 Silicon photonics

[19a-B201-7] Waveguide Germanium Avalanche Photodetector with Lateral SAM Structures

〇Hideki Ono¹, Masataka Noguchi¹, Junichi Fujikata¹, Hiroyuki Takahashi¹, Daisuke Shimura¹, Hiroki Yaegashi¹, Hironori Sasaki¹ (1.PETRA)

Keywords:Ge-APD, Lateral SAM, TWDM-PON

Ge-APDs with lateral SAM (Separated Absorption and Multiplication) structure were fabricated as optical receiving devices suitable for subscriber terminal ONU transceiver of TWDM-PON which is expected as next generation PON system and their static characteristics were evaluated. As a result, the responsivity at the wavelength of 1600nm was 13.3A/W for TE polarization and 15.0A/W for TM polarization at the reverse bias of 12V. And as the results of measurement for the frequency response at the wavelength of 1600nm, 13.8GHz was obtained in the 3dB band at the reverse bias of 12V. From the above, sufficient characteristics were obtained as optical receiving devices of a TWDM-PON with a transmission rate of 10Gbps.