[19a-B201-1~8] 3.15 Silicon photonics

[19a-B201-8] Study on Electro-Absorption Optical Modulator, Using Ge/Si Rib Waveguide II

〇Junichi Fujikata¹, Masataka Noguchi¹, Kazuki Kawashita², Shigeki Takahashi¹, Michiharu Nishimura^3,2, Hideki Ono¹, Daisuke Shimura¹, Hiroyuki Takahashi¹, Hiroki Yaegashi¹, Yasuhiko Ishikawa², Takahiro Nakamura¹ (1.PETRA, 2.Toyohashi Univ. Tech., 3.Univ. of Tokyo)

Keywords:germanium, electro-absorption modulator

We report on 20-40 um-long Ge/Si electro-absorption modulator on the Si rib-waveguide with pn junction. We demonstrate high-speed operation more than 25 Gbps in the C-band telecomunication wavelengths.