[19a-B203-1~9] 3.13 Semiconductor optical devices

▲ [19a-B203-2] Lasing Wavelength Dependence on Injection Current of GaInAsP/InP Membrane Distributed Reflector Laser with Thin-BCB Layer

〇Weicheng Fang¹, Tatsuya Uryu¹, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2, Shigehisa Arai^1,2 (1.Titech, 2.FIRST)

Keywords:DR laser

An introduction of photonic integrated circuits (PICs) is considered as one of promising solutions to replace global electrical wiring on Si-LSIs. For this purpose, we have proposed the concept of a membrane PIC composed of InP-based photonic platform with a semiconductor membrane DR laser bonded on a Si substrate using a benzocyclobutene (BCB) adhesive wafer bonding. However its high thermal resistance was considered to be a problem for high temperature CW operation. In order to solve it, we reduced the thickness of the BCB and shortened the distance between the active region and p-electrode, and measured the lasing wavelength dependences on injection current.