[19a-D101-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[19a-D101-9] Proton-Mediated Increase of a-Si:H Growth Rate at High Temperature

〇Yasutake Toyoshima¹ (1.AIST)

Keywords:amorphous Si, proton, growth rate

By ambipolar diffusion to the growing surface, proton is found to decrease the activation enegy of a-Si;H growth rate at high temperature in PECVD. By using the DFT caldulations, the surface reaction sequence that proton madeates to decrease the activation energy is presented in detail. Formation and fission of a positively-charged three-center bond (Si-H-Si⁺) by proton plays a key roll in this reaction sequence.