[19a-D102-1~10] 12.4 Organic light-emitting devices and organic transistors

△ [19a-D102-2] Electron-transport property in a novel, small-molecular n-type organic semiconductor

〇(P)Shohei Kumagai¹, Shun Watanabe^1,2, Hiroyuki Ishii³, Eiji Fukuzaki⁴, Yukio Tani⁴, Hiroki Sugiura⁴, Tetsuya Watanabe⁴, Yoshihisa Usami⁴, Hiroyasu Sato⁵, Akihito Yamano⁵, Tadanori Kurosawa¹, Jun Takeya¹, Toshihiro Okamoto^1,2 (1.The Univ. of Tokyo, 2.JST-PRESTO, 3.Tsukuba Univ., 4.Fujifilm Corp., 5.Rigaku Corp.)

Keywords:n-type organic semiconductor, Hall effect, Single-crystal structure analysis

In this work, the electron-transport property in a novel, small-molecular n-type organic semiconductor was investigated by using a thin-film transistor based on the solution-crystallized single crystal. Variable-temperature gate-induced Hall effect measurement using the transistor with a Hall-bar architecture revealed the coherence factor of 1 and the negative temperature dependence of charge carrier mobility in the range of 130−300 K. Therefore, this new material is concluded to exhibit an ideal band-like electron transport. Further discussion will be presented by linking this result with variable-temperature single-crystal X-ray structure analysis and band calculation.