[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-2] Interdiffusion Coefficient of molten Cr-Si-C and Fe-Si-C alloys at 1873 – 2273 K

〇Sakiko Kawanishi¹, Hiroyuki Shibata¹, Takeshi Yoshikawa² (1.Tohoku Univ., 2.The Univ. Tokyo)

Keywords:silicon carbide, solution growth, diffusion coefficient

To achieve rapid solution growth of SiC with keeping stable growth interface, control of solute transport around the growth interface is important. Precise evaluation of high temperature properties is inevitable to estimate the transport phenomenon. Measurement of Interdiffusion coefficient of molten Cr-Si-C and Fe-Si-C solutions at SiC saturation at 1873 – 2273 K was carried out by the temperature gradient zone melting method and the values of 10^-8 – 10^-7m²/s were obtained.