High Quality and High Speed of SiC Solution Growth from Si-Cr-Co Solvent

Koangyong Hyun; Naomichi Tsuchimoto; Koki Suzuki; Toshinori Taishi

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 19, 2018 9:00 AM - 12:15 PM D103 (56-103)

Toshinori Taishi(Shinshu Univ.)

10:15 AM - 10:30 AM

[19a-D103-6] High Quality and High Speed of SiC Solution Growth from Si-Cr-Co Solvent

Koangyong Hyun¹, Naomichi Tsuchimoto¹, Koki Suzuki¹, 〇Toshinori Taishi¹ (1.Shinshu Univ.)

Keywords:SiC, solution growth, high quality

Solution growth of SiC crystals from Si_0.6Cr_0.4 or Si_0.56Cr_0.4Co_0.04 solvents were conducted and growth rate and surface morphology of grown crystals were investigated. It was found that Co addition in Si_0.6Cr_0.4 solvent is effective to enhance the growth rate of SiC crystals with smooth surface.