[19a-D104-1~11] CS6 10.1 新物質・新機能創成（作製・評価技術）,10.2 スピン基盤技術・萌芽的デバイス技術,10.3 スピンデバイス・磁気メモリ・ストレージ技術のコードシェアセッション

▲ [19a-D104-4] Enhanced interfacial perpendicular magnetic anisotropy and voltage-controlled magnetic anisotropy in iridium-doped Fe/MgO structures

〇Takayuki Nozaki¹、Anna Koziol-Rachwal^1,2、Masahito Tsujikawa³、Yoichi Shiota¹、Xu Xiandong⁴、Tatsuya Yamamoto¹、Tadakatsu Ohkubo⁴、Takuya Tsukahara⁵、Shinji Miwa⁵、Motohiro Suzuki⁶、Shingo Tamaru¹、Hitoshi Kubota¹、Akio Fukushima¹、Kazuhiro Hono⁴、Masafumi Shirai³、Yoshishige Suzuki^1,5、Shinji Yuasa¹ (1.AIST、2.AGH Univ.、3.Tohoku Univ.、4.NIMS、5.Osaka Univ.、6.JASRI)

キーワード：Spintronics, Voltage-controlled magnetic anisotropy, Magnetic tunnel junction

Voltage-controlled magnetic anisotropy (VCMA) effect is a promising approach for ultra-low power spin manipulation. However, further improvement in the efficiency is strongly demanded for practical applications. In this work, we report the enhance interfacial perpendicular magnetic anisotropy and VCMA effect in Ir-doped ultrathin Fe layer in magnetic tunnel junctions.