[19a-D104-1~11] CS6 10.1 新物質・新機能創成（作製・評価技術）,10.2 スピン基盤技術・萌芽的デバイス技術,10.3 スピンデバイス・磁気メモリ・ストレージ技術のコードシェアセッション

▼ [19a-D104-5] Precession orbital transition in voltage-driven magnetization switching induced by thermal activation

〇Tatsuya Yamamoto¹、Takayuki Nozaki¹、Yoichi Shiota¹、Hiroshi Imamura¹、Shingo Tamaru¹、Kay Yakushiji¹、Hitoshi Kubota¹、Akio Fukushima¹、Yoshishige Suzuki^1,2、Shinji Yuasa¹ (1.AIST、2.Osaka Univ.)

キーワード：Voltage-controlled magnetic anisotropy, Magnetization switching, Magnetic tunnel junction

We study the voltage-driven magnetization switching in p-MTJs combining both experiment and numerical simulation. We show that the WER exhibits a local maximum at a certain pulse width as we increase the external magnetic fields. This result is well explained by taking into account transitions of magnetization between two different precession orbits. We also show that the increase of WER due to the orbit transition can be avoided by choosing a proper pulse width.