[19a-D104-1~11] CS6 10.1 新物質・新機能創成（作製・評価技術）,10.2 スピン基盤技術・萌芽的デバイス技術,10.3 スピンデバイス・磁気メモリ・ストレージ技術のコードシェアセッション

▲ [19a-D104-7] Electric field effect on magnetic domain wall motion in Pt/Co/Pd structures

〇Tomohiro Koyama¹、Daichi Chiba¹ (1.The Univ. of Tokyo)

キーワード：spintronics, magnetic domain wall motion, electric field effect on magnetism

In this work, we investigated the magnetic domain wall motion in Pt/Co/Pd structures under the application of gate electric field V_G. The domain wall velocity v difference between the results for V_G = ±15 V was approximately 100 times in the sample with the Co thickness of 0.96 nm. Such a large magnitude of v modulation was not observed in the samples without Pd. We found that the domain wall pinning strength was significantly modulated by V_G in the Pt/Co/Pd sample, resulting in the large change in v.